Magnetic Tunnel Junctions with Low Resistance-area Product of 0.5 Ωμm2
نویسندگان
چکیده
منابع مشابه
Low-frequency magnetic and resistance noise in magnetic tunnel junctions
We have studied the voltage fluctuations of current-biased, micron-scale magnetic tunnel junctions. We find that the spectral power density is 1/f -like at low frequencies and becomes frequency independent at high frequencies. The frequency-independent background noise is due to Johnson-Nyquist noise and shot noise mechanisms. The nature of the 1/f noise has its origin in two different mechanis...
متن کاملLow-frequency magnetic noise in micron-scale magnetic tunnel junctions.
We have observed low-frequency noise due to quasiequilibrium thermal magnetization fluctuations in micron-scale magnetic tunnel junctions (MTJs). This strongly field-dependent magnetic noise occurs within the magnetic hysteresis loops, either as 1/f or Lorentzian (random telegraph) noise. We attribute it to the thermally excited hopping of magnetic domain walls between pinning sites. Our result...
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Application of Bardeen’s tunneling theory to magnetic tunnel junctions having a general degree of atomic disorder reveals the close relationship between magneto-conduction and voltage-driven pseudo-torque, as well as the thickness dependence of tunnel-polarization factors. Among the results: 1) The torque generally varies as sin θ at constant applied voltage. 2) Whenever polarization factors ar...
متن کاملMagnetic Tunnel Junctions
Figure 1 Schematic illustration showing the mechanism of TMR. Top: for parallel aligned magnetization as sketched at left, electrons around the Fermi level with spin up (m) and spin down (k) are allowed to tunnel from majority to majority bands, and from minority to minority bands. Bottom: when the magnetization is antiparallel, tunneling takes place from majority to minority and minority to ma...
متن کاملStability of magnetic tunnel junctions
When magnetic tunnel junctions (MTJ) are built into a memory device they will be arranged in a matrix; therefore some of the not addressed elements will be exposed to a significant field during the switching of one element. It has to be avoided that the state of not selected MTJ is changed during this process. Here we present data on the stability of MTJ against small fields which occur during ...
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ژورنال
عنوان ژورنال: Journal of the Magnetics Society of Japan
سال: 2010
ISSN: 1882-2932,1882-2924
DOI: 10.3379/msjmag.1003r027